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| SEMICONDUCTOR TECHNICAL DATA POWER MANAGEMENT. FEATURES Including two devices in US6. (Ultra Super mini type with 6 leads) Simplify circuit design. KTX321U EPITAXIAL PLANAR PNP TRANSISTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR B B1 1 6 5 4 D C Reduce a quantity of parts and manufacturing process. 2 3 DIM A A1 B B1 C D G H MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 A1 H MARKING 6 5 A C Type Name 4 1. 2. 3. 4. 5. 6. Q1 Q1 Q2 Q2 Q2 Q1 G T T Q2 Q1 BR 2 3 1 2 3 EMITTER BASE DRAIN SOURCE GATE COLLECTOR 1 THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. US6 Q1 MAXIMUM RATING (Ta=25 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC ICP * PC * Tj Tstg RATING -15 -12 -6 -500 -1 150 150 -55 150 UNIT V V V mA A mW CHARACTERISTIC * Single Pulse PW=1mS. ** 120mW per element must not be exceeded. Each terminal mounted on a recommended land. Q2 MAXIMUM RATING (Ta=25 Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range ) SYMBOL VDS VGSS ID PC ** Tch Tstg RATING 30 20 100 150 150 -55 150 UNIT V V mA mW CHARACTERISTIC ** 120mW per element must not be exceeded. Each terminal mounted on a recommended land. 2003. 11. 20 Revision No : 0 1/6 KTX321U Q1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) fT Cob ) TEST CONDITION VCB=-15V, IE=0 VEB=-6V, IC=0 IC=-10 A IC=-1mA IE=-10 A VCE=-2V, IC=-10mA IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA, fT=100MHz VCB=-10V, IE=0, f=1MHz MIN. -15 -12 -6 270 TYP. -100 260 6.5 MAX. -100 -100 680 -250 UNIT nA nA V V V mV MHz pF Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-on Time Turn-off Time IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff ) TEST CONDITION VGS= 20V, VDS=0V ID=100 A, VGS=0V VDS=30V, VGS=0V VDS=3V, ID=0.1mA VDS=3V, ID=10mA ID=10mA, VGS=2.5V VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDD=5V, ID=10mA, VGS=0 5V MIN. 30 0.5 25 TYP. 4 8.5 3.3 9.3 50 160 MAX. 1 1 1.5 7 pF pF pF nS nS UNIT A V A V mS SYMBOL 2003. 11. 20 Revision No : 0 2/6 KTX321U Q 1 (PNP TRANSISTOR) h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K DC CURRENT GAIN h FE 500 300 Ta=125 C Ta=25 C Ta=-40 C VCE(sat) - I C -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 -1K Ta= 125 I C /IB =20 C 100 50 30 VCE =-2V 25 C C Ta= =-40 Ta 10 -1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) -1K -500 -300 -100 -50 -30 -10 -5 -3 -1 I C /IB =50 I C /IB =20 I C /IB =10 VBE(sat) - I C -10K BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) -5K -3K I C /IB =20 Ta=25 C -1K -500 -300 Ta=-40 C Ta=25 C C Ta=125 -100 -1 -3 -10 -30 -100 -300 -1K -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - VBE TRANSITION FREQUENCY f T (MHz) -1K COLLECTOR CURRENT I C (mA) -500 -300 -100 Ta=2 5C Ta=40 C VCE =-2V f T - IC 1K 500 300 VCE =-2V Ta=25 C Ta=1 -50 -30 -10 -5 -3 -1 0 25 C 100 50 30 -0.5 -1.0 -1.5 10 -1 -3 -10 -30 -100 -300 -1K BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (mA) 2003. 11. 20 Revision No : 0 3/6 KTX321U C ob - VCB , C ib - VEB COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) 500 300 100 50 30 10 5 3 1 -0.1 C ob COLLECTOR POWER DISSIPATION PC (mW) 1K I E =0A f=1MHz Ta=25 C Pc - Ta 200 150 C ib 100 50 0 -0.3 -1 -3 -10 -30 -100 0 25 50 75 100 125 150 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) AMBIENT TEMPERATURE Ta ( C) 2003. 11. 20 Revision No : 0 4/6 KTX321U Q 2 (N CHANNEL MOS FIELD EFFECT TRANSISTOR) I D - VDS 100 DRAIN CURRENT I D (mA) 80 60 40 20 0 2.5V 2.2V 2.0V 1.8V 1.6V 1.4V VGS =1.2V I D - V DS (LOW VOLTAGE REGION) 1.0 DRAIN CURRENT ID (mA) 0.8 0.6 0.4 0.2 0 2.5V 1.2V 1.15V COMMON SOURCE Ta=25 C COMMON SOURCE Ta=25 C 1.1V 1.05V 1.0V VGS =0.9V 0 2 4 6 8 10 12 0 0.1 0.2 0.3 0.4 0.5 0.6 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) I DR - VDS DRAIN REVERSE CURRENT I DR (mA) 100 VGS =0 Ta=25 C D G S I DR I D - VGS 100 DRAIN CURRENT ID (mA) 30 10 3 1 0.3 0.1 0.03 0.01 0 1 2 3 4 5 100 C 30 10 3 1 0.3 0.1 0.03 0.01 0 -0.4 -0.8 COMMON SOURCE COMMON SOURCE VDS =3V Ta= Ta=25 C Ta=-25 C -1.2 -1.6 DRAIN-SOURCE VOTAGE VDS (V) GATE-SOURCE VOTAGE VGS (V) Y fs FORWARD TRANSFER ADMITTANCE Y (mS) 300 COMMON SOURCE V DS =3V Ta=25 C - ID 100 CAPACITANCE C (pF) 50 30 C oss C iss C - V DS COMMON SOURCE VGS =0 f=1MHz Ta=25 C 100 50 30 fs 10 5 3 10 5 1 3 5 10 30 50 100 C rss 1 0.1 0.3 0.5 1 3 5 10 DRAIN CURRENT I D (mA) DRAIN-SOURCE VOLTAGE VDS (V) 20 2003. 11. 20 Revision No : 0 5/6 KTX321U VDS(ON) - I D 2 DRAIN-SOURCE ON VOLTAGE VDS(ON) (V) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 1 3 5 10 30 50 100 10 1 COMMON SOURCE VGS =2.5V Ta=25 C t - ID 1K SWITCHING TIME t (ns) 500 300 t on tr 100 50 30 50 5V V IN 0 10s ID VOUT RL t off tf VDD =5V D.U. < 1% = VIN :t r , t f < 5ns (Z OUT =50) COMMON SOURCE Ta=25 C VDD 3 5 10 30 50 100 DRAIN CURRENT I D (mA) DRAIN CURRENT I D (mA) P D - Ta DRAIN POWER DISSIPATION PD (mW) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) SWITCHING TIME TEST CIRCUIT 5V 0 10s VIN VIN ID VOUT VDD =5V D.U. < 1% = V IN :t r , t f < 5ns VIN 5V 10% 90% 0 V DD VOUT VDS (ON) RL 50 (Z OUT =50) COMMON SOURCE VDD Ta=25 C 10% 90% tr t on t off tf 2003. 11. 20 Revision No : 0 6/6 |
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